Progress towards a 20 kV, 2 kA plasma source ion implantation modulator for automotive production of diamond film on aluminum
- Los Alamos National Lab., NM (United States)
- General Motors Research Lab., Warren, MI (United States)
This paper provides the process requirements and the electrical design topology being developed to facilitate large scale production of amorphous diamond films on aluminum. The patented recipe, that includes other surface modification processes, requires various operational voltages, duty cycles, and current load regimes to ensure a high quality film. It is desirable to utilize a common modulator design for this relatively low voltage recipe. Processing may include target part cleaning, ion implantation, plasma deposition, and vacuum chamber cleaning. Modulator performance will have a direct impact on plant size and system economics. Unfortunately, process requirements are in a regime that is not easily achievable by solid state or very efficiently by vacuum tube devices. To accommodate the various process requirements, the authors are developing a modulator based on series connected hot decks utilizing high current, high voltage IGBT devices.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 392831
- Report Number(s):
- LA-UR--96-3355; CONF-960685--9; ON: DE97000350
- Country of Publication:
- United States
- Language:
- English
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