Oxygen diffusion coefficients for Sr{sub 2}AlTaO{sub 6}: Ramifications on HTSC multilayer processing
- Army Research Lab., Fort Monmouth, NJ (United States)
- Conductus, Inc., Sunnyvale, CA (United States)
The authors have studied the rate of oxygen diffusion through Sr{sub 2}AlTaO{sub 6} (SAT), a buffer and dielectric layer used in high critical temperature superconducting (HTSC) structures. An epitaxial bilayer film of SAT on YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) was deposited onto an (001) oriented single crystal LaAlO{sub 3} substrate using the pulsed laser deposition technique. The rate of oxygen diffusion through the bilayer was investigated over the temperature range 415 to 675 C by post deposition annealing individual sections of the bilayer in 1/3 atm of {sup 18}O enriched molecular oxygen gas. Secondary ion mass spectroscopy was used to depth profile {sup 18}O and {sup 16}O in each sample. Oxygen diffusion coefficients for SAT at 418, 510, 570 and 673 C were determined to be roughly (0.93, 6.31, 26.6 and 75.3) {times} 10{sup {minus}16} cm{sup 2} s{sup {minus}1}, respectively. Since these diffusion rates can limit oxygen intake into underlying YBCO films, SAT may be an inappropriate choice as a dielectric candidate for use in an HTSC multilayer device technology and will at best require development of suitable post annealing schemes to oxygenate underlying YBCO layers.
- OSTI ID:
- 392182
- Report Number(s):
- CONF-951155--; ISBN 1-55899-304-5
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALUMINATES
ALUMINIUM OXIDES
ANNEALING
ATOM TRANSPORT
BARIUM OXIDES
COMPOSITE MATERIALS
COPPER OXIDES
DIFFUSION
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
ION MICROPROBE ANALYSIS
LANTHANUM COMPOUNDS
LASERS
MASS SPECTROSCOPY
MICROWAVE EQUIPMENT
OXYGEN 18
SCANNING ELECTRON MICROSCOPY
STRONTIUM OXIDES
TANTALUM OXIDES
YTTRIUM OXIDES