Y--Ba--Cu--O multilayer structures with amorphous dielectric layers for multichip modules using ion-assisted pulsed-laser deposition
- Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
- University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Existing technology to construct high-temperature superconductor (HTSC) multichip modules (MCM`s) incorporating several YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single-crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria-stabilized zirconia (YSZ) intermediate layer deposited by ion-assisted pulsed-laser deposition. Using this technique, a YBCO thin film with {ital T}{sub {ital c}}{similar_to}87 K and {ital J}{sub {ital c}}{similar_to}3{times}10{sup 5} A/cm{sup 2} was grown on a 5 {mu}m amorphous SiO{sub 2} layer. In addition, YBCO/YSZ/SiO{sub 2}/YSZ/YBCO/CeO{sub 2}/YSZ and YBCO/YSZ/amorphous-YSZ/YBCO/CeO{sub 2}/YBCO multilayer structures were constructed.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 29245
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 66; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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