Sputtered and reactively grown epitaxial GdAlO{sub 3} films as buffer layers for c-oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} films on R-sapphire

Conference · Fri Nov 01 00:00:00 EST 1996

OSTI ID:392181

Senz, S; Sieber, H; Zakharov, N D; Hesse, D ^[1]; Lorenz, M; Hochmuth, H ^[2]

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1. Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany)
2. Univ. Leipzig (Germany). Inst. fuer Experimentalphysik II

Thin films of the orthorhombic perovskite GdAlO{sub 3} were grown on R-plane sapphire single crystals. Two different film growth methods were used, viz. (i) a chemical reaction of a Gd-O plasma with the sapphire crystals, and (ii) the reactive radio frequency (r.f.) sputtering of a GdAlO{sub 3} target. Subsequently, YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) films were deposited onto the GdAlO{sub 3} buffer by pulsed laser deposition (PLD). The GdAlO{sub 3} and YBCO films were investigated by X-ray diffraction pole figure analysis and transmission electron microscopy (TEM), including high-resolution transmission electron microscopy of cross sections. Independent of the deposition method the GdAlO{sub 3} films grew according to the nearly equivalent orientation relationships (110){sub perovskite} {parallel} (1{bar 1}.2){sub sapphire}; [111] or [11{bar 1}]{sub perovskite} {parallel} [11.0]{sub sapphire} and (002){sub perovskite} {parallel} (1{bar 1}.2){sub sapphire}; [100] or [010]{sub perovskite} {parallel} [11.0]{sub sapphire}. The GdAlO{sub 3} grains are additionally tilted by angles up to {+-}3{degree} around the sapphire [{bar 1}1.1] axis. On top of these buffer layers the YBCO films grew with c-orientation and with an in-plane rotation of 45{degree}. YBCO films of 200 nm thickness on GdAlO{sub 3} buffer layers with a thickness of 10 to 20 nm showed a {Tc} > 87 K and a j{sub c}(77 K) > 3 {times} 10{sup 6} A/cm{sup 2}.

• OSTI ID: 392181
• Report Number(s): CONF-951155-; ISBN 1-55899-304-5; TRN: IM9647%%35
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Epitaxial oxide thin films 2; Speck, J.S. [ed.] [Univ. of California, Santa Barbara, CA (United States)]; Fork, D.K. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Wolf, R.M. [ed.] [Philips Research Labs., Briarcliff Manor, NY (United States)]; Shiosaki, Tadashi [ed.] [Kyoto Univ. (Japan)]; PB: 577 p.; Materials Research Society symposium proceedings, Volume 401
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
COMPOSITE MATERIALS
SURFACE COATING
MICROSTRUCTURE
GADOLINIUM OXIDES
ALUMINIUM OXIDES
YTTRIUM OXIDES
BARIUM OXIDES
COPPER OXIDES
MICROWAVE EQUIPMENT
SUBSTRATES
SAPPHIRE
MONOCRYSTALS
CHEMICAL REACTIONS
ENERGY BEAM DEPOSITION
PLASMA
SPUTTERING
X-RAY DIFFRACTION
TRANSMISSION ELECTRON MICROSCOPY
ORIENTATION
TWINNING
INTERFACES