Homo and heteroepitaxial growth of LiTaO{sub 3} and LiNbO{sub 3} by MBE

Conference · Thu Oct 31 23:00:00 EST 1996

OSTI ID:392168

Sitar, Z; Liu, W ^[1]; Gitmans, F; Guenter, P ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
2. ETH Zuerich (Switzerland)

Thin films and superlattices of LiTaO{sub 3} and LiNbO{sub 3} were grown on (0001) LiTaO{sub 3} and LiNbO{sub 3} wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900 C. Films were c-axis oriented but showed in-plane 60{degree} rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO{sub 3}. It showed well defined interfaces and appeared to be strained.

• OSTI ID: 392168
• Report Number(s): CONF-951155--; ISBN 1-55899-304-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
ELECTRON BEAMS
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
INTERFACES
LITHIUM OXIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NIOBIUM OXIDES
ORIENTATION
OXIDATION
PHOTOELECTRON SPECTROSCOPY
PLASMA
TANTALUM OXIDES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY