Investigation of film growth for amorphous Nb/Si multilayers

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117954· OSTI ID:389249

Zhang, M ^[1]; Wang, W K ^[2]

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1. Institute of Physics, Academia Sinica, Beijing 100080, People`s Republic of (China)
2. International Center for Materials Physics, Academia Sinica, Shenyang 110015, People`s Republic of (China)

In this letter, film growth for amorphous Nb/Si multilayers has been studied by using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Results from XRD and XTEM show that the structures of amorphous Nb/Si multilayers deposited at room temperature and 550{degree}C are quite different. The influences of surface mobility of adatoms and interfacial reaction on interfacial roughness are discussed. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 389249
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
AMORPHOUS STATE
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
INTERFACE STRUCTURE
INTERFACES
NIOBIUM
SILICON
SPUTTERING
THIN FILMS
X-RAY DIFFRACTION
XRD