High temperature 4H-silicon carbide thyristors and power MOSFETs

Journal Article · Fri Mar 01 04:00:00 EST 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.49902· OSTI ID:385498

Palmour, J W; Allen, S T; Singh, R; Lipkin, L A; Waltz, D G ^[1]

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1. Cree Research, Inc., 2810 Meridian Parkway, Durham, North Carolina 27713 (United States)

Two types of high temperature power switches, MOSFETs and thyristors, have been demonstrated in 4H-SiC. Vertical UMOS power MOSFETs have been demonstrated to block voltages as high as 260 V with a specific on-resistance of 18 m{Omega}-cm{sup 2}. Larger area, 175 V MOSFETs had a rated current of 2 Amps (200 A/cm{sup 2}) at {ital V}{sub {ital d}}=2.65 V. Previous 4H-SiC UMOS MOSFETs were measured to operate up to 573 K. 4H-SiC npnp thyristors have been successfully operated up to 773 K, and have achieved blocking voltages of 600 V and an on-current of 1.8 A. Larger area, 200 V thyristors had a rated current of 10 Amps (620 A/cm{sup 2}) with a voltage drop of 3.6 V. Current densities as high as 1000 A/cm{sup 2} at {minus}4.0 V has also been achieved. The thyristors have also shown very fast turn-off times, ranging from 360{endash}640 nsec. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 385498
• Report Number(s): CONF-960109--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 361; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DESIGN
ELECTRIC CONDUCTIVITY
FIELD EFFECT TRANSISTORS
MOSFET
SEMICONDUCTOR DEVICES
SILICON CARBIDES
SILICON OXIDES
SWITCHING CIRCUITS
THYRISTORS