Structural and dielectric properties of Bi{sub 2}Nb{sub {ital x}}V{sub 1{minus}{ital x}}O{sub 5.5} ceramics

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1996.0291· OSTI ID:383762

Varma, K B; Prasad, K V ^[1]

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1. Materials Research Centre, Indian Institute of Science, Bangalore 560 012 (India)

Bi{sub 2}Nb{sub {ital x}}V{sub 1{minus}{ital x}}O{sub 5.5} ceramics with {ital x} ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at {ital x}{ge}0.1 and it persists until {ital x}=0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi{sub 2}Nb{sub {ital x}}V{sub 1{minus}{ital x}}O{sub 5.5} ceramics confirm that the grain size decreases markedly (18 {mu}m to 4 {mu}m) with increasing {ital x}. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing {ital x}, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan{delta}) decrease with increasing {ital x} at room temperature. {copyright} {ital 1996 Materials Research Society.}

• OSTI ID: 383762
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 9 Vol. 11; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CERAMICS
CRYSTAL STRUCTURE
DIELECTRIC PROPERTIES
FREQUENCY DEPENDENCE
HZ RANGE
KHZ RANGE
MHZ RANGE 01-100
MICROSTRUCTURE
NIOBIUM OXIDES
SINTERING
SUBSTITUTION
TEMPERATURE DEPENDENCE
VANADIUM OXIDES