Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

Conference · Mon Jun 24 00:00:00 EDT 1996

OSTI ID:378644

Vernon, S P; Kania, D R; Kearney, P A; Levesque, R A ^[1]; Hayes, A V; Druz, B; Osten, E; Rajan, R; Hedge, H ^[2]

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1. Lawrence Livermore National Lab., CA (United States)
2. Veeco Instruments, Inc., Plainview, NY (United States)

We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 378644
• Report Number(s): UCRL-JC-123009; CONF-9604150-3; ON: DE96014135
• Resource Relation: Conference: Optical Society of America meeting on extreme ultraviolet lithography, Boston, MA (United States), 29 Apr - 3 May 1996; Other Information: PBD: 24 Jun 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MIRRORS
MOLYBDENUM
DEPOSITION
SILICON
MASKING
REFLECTIVE COATINGS
X RADIATION
EXTREME ULTRAVIOLET RADIATION