Pulsed source ion implantation apparatus and method
Patent
·
OSTI ID:378141
A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.
- Research Organization:
- Univ. of California (United States)
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,558,718/A/
- Application Number:
- PAN: 8-225,043
- OSTI ID:
- 378141
- Resource Relation:
- Other Information: PBD: 24 Sep 1996
- Country of Publication:
- United States
- Language:
- English
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