Ion-beam polishing of diamond thin films
Book
·
OSTI ID:375990
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
Planarization of diamond thin films has been carried out using a remote electron cyclotron resonance (ECR) oxygen plasma under a negative bias. Diamond thin films were synthesized by hot filament chemical vapor deposition (HFCVD). The surface roughness (R{sub a}) of the diamond films could be considerably reduced from 0.2 {micro}m to 0.05 {micro}m using the ECR oxygen plasma. Low planarization and a high etching rate of diamond films were observed for an incident angle of the ion beam to the film surface normal below 45 degrees. High applied bias above {minus}600 V caused secondary discharge effects, resulting in inhomogeneous etching. With an increase in incident angle, needle-like morphology was observed in the diamond film.
- OSTI ID:
- 375990
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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