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Deposition and characterization of diamond thin films by HF-CVD method

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4917964· OSTI ID:22490423
;  [1];  [2]
  1. Materials Processing Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)
  2. Materials Science Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm{sup −1} wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.

OSTI ID:
22490423
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English