Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

Book · Sun Dec 31 04:00:00 EST 1995

OSTI ID:375946

Kalin, B A; Gladkov, V P; Volkov, N V; Sabo, S E ^[1]

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1. Moscow Engineering Physics Inst. (Russian Federation)

Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.

• OSTI ID: 375946
• Report Number(s): CONF-941144--; ISBN 1-55899-255-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ARGON IONS
ATOM TRANSPORT
BERYLLIUM
CRYSTAL DOPING
DEPTH
DIAMONDS
DIFFUSION
EXPERIMENTAL DATA
HELIUM IONS
HYDROGEN IONS
ION IMPLANTATION
NICKEL
SILICON
ZIRCONIUM