Luminescence during Tb-ion implantation into sapphire
- Saitama Univ., Urawa, Saitama (Japan)
- Inst. of Physical and Chemical Research, Wako, Saitama (Japan)
A study has been made of the luminescence during Tb-ion implantation in Al{sub 2}O{sub 3} or by Ar- or He-ions bombardment to Tb-ion implanted Al{sub 2}O{sub 3}. The substrates used were colorless and transparent single crystal {alpha}{minus}Al{sub 2}O{sub 3} with (0001) or (1102) surface orientation. Ion implantations of Tb-ions in Al{sub 2}O{sub 3} were carried out at fluences of 1 {times} 10{sup 13} to 1 {times} 10{sup 17} Tb/cm{sup 2} at 100 keV at nearly room temperature. Change in color of Al{sub 2}O{sub 3} substrates by Tb implantation was invisible to the naked eye. The luminescence spectra were measured by Ar (100 keV) or He (50 keV) bombardment to Tb implanted Al{sub 2}O{sub 3} or during Tb implantation into Al{sub 2}O{sub 3} using a spectroscopy with three optical filters and photomultiplier. The luminescence spectra during Tb implantation into Al{sub 2}O{sub 3} have four clear peaks identified as emission due to D-F transitions of Tb{sup 3+} state. The luminescence spectra of Tb implanted Al{sub 2}O{sub 3} excited by He, Ar and Tb bombardment were almost the same except for the luminescence at the wavelength ranging from 300 to 450 nm, which is caused by strong emission from Al{sub 2}O{sub 3} itself. The peak of the luminescence appears at 550 nm, and its intensity depends on the Tb dose. The maximum intensity of luminescence during Tb implantation at room temperature is obtained as the maximum atomic ratio of implanted Tb is 2--3 atomic %.
- OSTI ID:
- 375932
- Report Number(s):
- CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%20
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructural characterization of iron implanted sapphire nanocomposites
Chemical implantation, isotopic trapping effects, and induced hygroscopicity resulting from 15 keV ion bombardment of sapphire