Microstructural characterization of iron implanted sapphire nanocomposites
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab., Oak Ridge, TN (United States)
Nanocomposites of iron in sapphire ({alpha}-Al{sub 2}O{sub 3}) prepared by ion implantation have been studied as a model to investigate the potential of such materials for applications in high technology areas. The implantation was performed with 160 keV ions at several doses; the nanocomposites were than annealed at selected temperatures between 700 and 1,400 C in an Ar-4%H{sub 2} atmosphere for 1 hour. Rutherford backscattering spectroscopy and high resolution transmission electron microscopy (TEM) were used to characterize the structure of these nanocomposites. Measurements showed that damage depth extended to abut 300 nm and the embedded iron extended to about 200 nm. This region became amorphous when the fluence reaches 2 {times} 10{sup 17}Fe/cm{sup 2} at this energy. At this dose, oriented precipitates with diameters of 2 to 3 nm were identified by TEM techniques as {alpha}-Fe which had the following orientation relationship with the sapphire matrix: <111>{sub Fe}{vert_bar}{vert_bar}<310>{sub Sapphire} and {l_brace}01{bar 1}{r_brace}{sub Fe}{vert_bar}{vert_bar}{l_brace}006{r_brace}{sub Sapphire}. Thermal annealing could be used to restore the crystallinity to the damaged near-surface region, to form the metallic colloids, and also to coarsen the precipitates. The optical density and luminescence spectra were also measured. The predominant defects were oxygen vacancies with two electrons (F center) at the known absorption peak of 200 nm.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 99449
- Report Number(s):
- CONF-941144-; ISBN 1-55899-275-8; TRN: 95:019108
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Microstructure of irradiated materials; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering]; Rehn, L.E. [ed.] [Argonne National Lab., IL (United States). Materials Science Div.]; Zinkle, S.J. [ed.] [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.]; Phythian, W.J. [ed.] [AEA Technology-Harwell, Oxon (United Kingdom)]; PB: 588 p.; Materials Research Society symposium proceedings, Volume 373
- Country of Publication:
- United States
- Language:
- English
Similar Records
Influence of dose rate on bubble formation by high energy He implantation in silicon
Microstructural and chemical effects in Al sub 2 O sub 3 implanted with iron at room temperature and annealed in oxidizing or reducing atmospheres