In-situ ellipsometry study of ion bombardment effects on low temperature Si epitaxy by dc magnetron sputtering
- Univ. of Illinois, Urbana, IL (United States)
- Applied Materials, Inc., Santa Clara, CA (United States)
The authors deposit Si films on Si(100) substrates at temperatures of 300--350 C using dc magnetron sputtering, and characterize the structure by in-situ spectroscopic ellipsometry. Changes in the ion or electron bombardment, produced by biasing the sample with respect to the floating potential, are found to exert a strong effect on the kinetics of the crystalline (epitaxial) to amorphous transition for films deposited just below the apparent minimum temperature (350 C) for sustained epitaxy. At 320 C, the best results are found at the floating potential, which is 254 V below the plasma potential and produces an ion flux equal to the depositing Si flux on the substrate. At +14 V above the floating potential, the volume fraction of crystalline Si decreases exponentially with thickness, and the characteristic decay length is a function of substrate temperature. At {minus}14 V below the floating potential, the deposited film is amorphous with a large void content. These observations demonstrate the subtle tradeoff between enhanced surface mobility and defect creation by low energy ion bombardment.
- OSTI ID:
- 375925
- Report Number(s):
- CONF-941144-; ISBN 1-55899-255-3; TRN: IM9642%%13
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
- Country of Publication:
- United States
- Language:
- English
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