1/f noise near the metal-insulator transition

Journal Article · Wed Mar 30 04:00:00 EST 1994 · International Journal of Modern Physics B

DOI:https://doi.org/10.1142/S0217979294000440· OSTI ID:37207

Cohen, O; Ovadyahu, Z ^[1]

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1. Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics

The 1/f noise level in polycrystalline indium oxide thin films and of zinc oxide accumulation layers is found to be much higher than that usually observed in metals. A systematic study of the flicker noise properties in these systems reveals a correlation between the 1/f noise magnitude and the proximity of the system to the insulating phase. In fact, the noise appears to increase dramatically close to the Anderson transition but when the average transport properties exhibited by the system are still diffusive. For static disorder that exceeds the critical value characterized by K{sub F}l {approx_equal} 1 the system exhibits insulating behavior and the noise level saturates at a rather high, but disorder independent value. The similarity of these findings to the behavior of the magnetic-field-induced conductance Fluctuations in this system will be pointed out to suggest a common physical origin. This leads to the prediction of high levels of 1/f in all electronic systems that are close to the metal-insulator transition.

• Sponsoring Organization: USDOE
• OSTI ID: 37207
• Report Number(s): CONF-930879--
• Journal Information: International Journal of Modern Physics B, Journal Name: International Journal of Modern Physics B Journal Issue: 7 Vol. 8; ISSN IJPBEV; ISSN 0217-9792
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
ELECTRIC CONDUCTIVITY
INDIUM OXIDES
TIME DEPENDENCE
ZINC OXIDES