Resonance Raman scattering studies of composition-modulated GaP/InP short-period superlattices
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69{plus_minus} 0.05eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0{plus_minus} 0.5cm{sup {minus}1} near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70{plus_minus} 0.02, and the average Ga composition in the Ga-rich region as 0.68{plus_minus}0.02. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 365982
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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