Charge transport in polymer light-emitting diodes at high current density
- Los Alamos National Laboratory, Los Alamos, New Mexico, 87545 (United States)
- The University of Texas at Dallas, Richardson, Texas, 75083 (United States)
We present measured and calculated current{endash}voltage (I{endash}V) characteristics of diodes fabricated using a soluble poly({ital p}-phenylene vinylene) derivative. Steady-state and pulsed electrical excitation were used to acquire the I{endash}V characteristics for current densities from 1{times}10{sup {minus}3} to 1.3{times}10{sup 3}&hthinsp;A/cm{sup 2}. Hole current is predominant in the diode. The I{endash}V characteristics were fit using a device model that assumes an electric field-dependent hole mobility of the Poole{endash}Frenkel form that is independent of the charge carrier density. The measured and calculated I{endash}V characteristics are in good agreement over the full range of current density. The maximum electric field and carrier density is about 4{times}10{sup 6}&hthinsp;V/cm and 1{times}10{sup 18}&hthinsp;cm{sup {minus}3}, respectively. These results demonstrate that an electric field-dependent mobility, without carrier density dependence, provides an accurate description of hole transport in this polymer over this range of field and carrier density. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 365881
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 75; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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