Status of diffused junction p+n InP solar cells for space applications
- Cleveland State Univ., OH (United States)
Recently, the authors have succeeded in fabricating diffused junction p{sup +}n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V{sub OC}) of 887.6 mV, which, to the best of their knowledge, is higher than previously reported V{sub OC} values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p{sup +} InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.
- Research Organization:
- NASA Lewis Research Center, Cleveland, OH (United States)
- OSTI ID:
- 36417
- Report Number(s):
- N-95-20502; NASA-CP-3278; E-9083; NAS-1.55:3278; CONF-9406314-; TRN: 9520509
- Resource Relation:
- Conference: 13. space photovoltaic research and technology conference, Cleveland, OH (United States), 14-16 Jun 1994; Other Information: PBD: Sep 1994; Related Information: Is Part Of Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); PB: 421 p.
- Country of Publication:
- United States
- Language:
- English
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