Status of diffused junction p{sup +}n InP solar cells for space power applications

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191220

Faur, M ^[1]; Faur, M; Flood, D J ^[2]

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1. Cleveland State Univ., OH (United States)
2. National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; and others

Recently, the authors have succeeded in fabricating diffused junction p{sup +}n (Cd,S) InP solar cells with measured AM0, 25 C open circuit voltage (V{sub oc}) of 890 mV, which, to the best of their knowledge, is higher than previously reported V{sub oc} values for any InP homojunction solar cells. The experiment-based projected achievable maximum AM0, 25 C efficiency of these cells, using LEC grown substrates, is 21.3%. The maximum AM0, 25 C efficiency recorded to date on bare cells is, however, only 13.2% due entirely to non-optimized front grid, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p{sup +}n InP diffused structures and solar cells, undertaken in an effort to increase the cell efficiency. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

• OSTI ID: 191220
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AUGMENTATION
DEFECTS
EFFICIENCY
FABRICATION
INDIUM PHOSPHIDE SOLAR CELLS
SOLAR CELL ARRAYS
SPACECRAFT POWER SUPPLIES