Response to parallel magnetic field of a dilute two-dimensional electron system across the metal-insulator transition
Journal Article
·
· Physical Review, B: Condensed Matter
- Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
- Physics Department, Northeastern University, Boston, Massachusetts 02115 (United States)
- Department of Applied Physics, Delft University of Technology, 2628 CJ Delft (The Netherlands)
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon metal-oxide-semiconductor field-effect transistors is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about 1 T. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 362706
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 60, Issue 8; Other Information: PBD: Aug 1999
- Country of Publication:
- United States
- Language:
- English
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