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Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe:Cr{sup 2+}

Journal Article · · Journal of Electronic Materials
;  [1]; ; ;  [2]
  1. West Virginia Univ., Morgantown, WV (United States). Dept. of Physics
  2. Fisk Univ., Nashville, TN (United States). Dept. of Physics
ZnSe:Cr{sup 2+} is an attractive candidate as a room-temperature tunable solid-state laser with output in the 2--3 {micro}m range. Passive absorption losses in this emission range currently limit laser performance. In this study, the authors use absorption and photoluminescence spectroscopies at 5 and 296K to address the origin of these optical losses. A series of diffusion-doped ZnSe:Cr single-crystal samples with Cr{sup 2+} concentrations in the range from 2 {times} 10{sup 17} cm{sup {minus}3} to 9 {times} 10{sup 19} cm{sup {minus}3} were obtained using CrSe powder as the dopant source. The authors find that trace amounts of Fe{sup 2+} produce absorption in the 2--3 {micro}m range. Also, they have obtained data on a 680 nm absorption band observed in ZnSe:Cr which has been assigned to an internal transition of Cr{sup 2+}. In the series of samples, the relative intensities of the 680 nm absorption band do not track the relative intensities of the 1.8 {micro}m band (known to be due to Cr{sup 2+}), although excitation near 680 nm does produce weak Cr{sup 2+} luminescence. The absorption data do not support the current assignment of the 680 nm absorption as being an internal transition of the Cr{sup 2+} ion.
Sponsoring Organization:
National Aeronautics and Space Administration, Washington, DC (United States); USDOE, Washington, DC (United States)
OSTI ID:
362097
Report Number(s):
CONF-9810154--
Journal Information:
Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 6 Vol. 28; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English

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