Advances in composition control for 16 {mu}m LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K
- Lockheed Martin IR Imaging Systems, Lexington, MA (United States)
With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe heterojunction photodiodes with very long cutoff wavelengths. Diode arrays with good R{sub o}A operability, good quantum efficiency, and low l/f noise at 60K have been demonstrated at cutoff wavelengths to 16.3 {micro}m. The diode performance continues to improve at lower temperatures, following a diffusion-current trend to at least 35K. Measured R{sub o}A values of 2 {times} 10{sup 5} ohm-cm{sup 2} for an 18 {micro}m cutoff at 35K are the highest reported at this very long wavelength. A simple defect model applied to the area dependence of R{sub o}A at 40K implied a defect areal density of 3 {times} 10{sup 4} cm{sup {minus}2} and a defect impedance of 3 {times} 10{sup 6} ohm.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 362096
- Report Number(s):
- CONF-9810154--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 6 Vol. 28; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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