Optical transitions in Pr-implanted GaN

Journal Article · Sun Aug 01 04:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124514· OSTI ID:361592

Zavada, J M ^[1]; Mair, R A; Ellis, C J; Lin, J Y; Jiang, H X ^[2]; Wilson, R G ^[3]; Grudowski, P A; Dupuis, R D ^[4]

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1. U.S. Army European Research Office, London NW15TH (United Kingdom)
2. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
3. Consultant, Stevenson Ranch, California 91381 (United States)
4. University of Texas at Austin, Austin, Texas 78712-1100 (United States)

Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7{times}10{sup 13}/cm{sup 2}. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050&hthinsp;{degree}C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10{endash}300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 361592
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
ION IMPLANTATION
PHOTOLUMINESCENCE
PRASEODYMIUM
PRASEODYMIUM ADDITIONS
TEMPERATURE DEPENDENCE