High-Resolution Electron Microscopy of Twist and General Grain Boundaries

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.83.556· OSTI ID:355467

Merkle, K L; Thompson, L J ^[1]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

High-resolution imaging of atomic structures of twist and general grain boundaries (GBs) is reported in samples prepared by a thin-film technique in which [011] and [001] oriented Au grains are epitaxially grown side by side, allowing the investigation of a wide range of GB geometries. GBs with tilt as well as twist components typically have structural modulations along the interface and often show a surprising amount of coherence between lattice planes crossing the interface. The [110], 90{degree} symmetric twist GB does not remain planar, but reconstructs into atomic-scale microfacets. {copyright} {ital 1999} {ital The American Physical Society }

• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 355467
• Journal Information: Physical Review Letters, Vol. 83, Issue 3; Other Information: PBD: Jul 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GRAIN BOUNDARIES
TRANSMISSION ELECTRON MICROSCOPY
GOLD
EPITAXY
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS