Localized vibrational modes of carbon-hydrogen complexes in GaN

Journal Article · Sun Aug 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124473· OSTI ID:355428

Manasreh, M O ^[1]; Baranowski, J M; Pakula, K ^[2]; Jiang, H X; Lin, J ^[3]

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1. Air Force Research Laboratory (AFRL/VSSS), Kirtland AFB, New Mexico 87117-5776 (United States)
2. Institute of Experimental Physics, Warsaw University, 00-681 Warsaw, Hoza 69 (Poland)
3. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)

Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm{sup {minus}1} for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH{sub 2}, and CH{sub 3} defect complexes, respectively. However, the localized vibrational modes were not observed in some undoped samples, which is indicative of high quality grown epitaxial layers. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 355428
• Journal Information: Applied Physics Letters, Vol. 75, Issue 5; Other Information: PBD: Aug 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM COMPOUNDS
HYDROGEN
CARBON
GALLIUM NITRIDES
VIBRATIONAL STATES
CHEMICAL VAPOR DEPOSITION
INFRARED SPECTRA
DOPED MATERIALS
SILICON ADDITIONS
MAGNESIUM ADDITIONS
CRYSTAL DEFECTS
SEMICONDUCTOR MATERIALS
CARBON COMPLEXES
HYDROGEN COMPLEXES