The band-gap bowing of Al{sub x}Ga{sub 1{minus}x}N alloys
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
The band gap of Al{sub x}Ga{sub 1{minus}x}N is measured for the composition range 0{le}x{lt}0.45; the resulting bowing parameter, b=+0.69&hthinsp;eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the Al{sub x}Ga{sub 1{minus}x}N: directly nucleated or buffered growths of Al{sub x}Ga{sub 1{minus}x}N initiated on sapphire at temperatures T{gt}800&hthinsp;{degree}C usually lead to stronger apparent bowing (b{gt}+1.3&hthinsp;eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b{lt}+1.3&hthinsp;eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62({plus_minus}0.45)&hthinsp;eV. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 353692
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 74; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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