Recombination lifetime of In{sub x}Ga{sub 1{minus}x}As alloys used in thermophotovoltaic converters
- National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, Colorado 80401 (United States)
The family of ternary compounds of composition In{sub x}Ga{sub 1{minus}x}As are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In{sub 0.53}Ga{sub 0.47}, that is lattice-matched to InP. We will also describe lifetime results on the compositions In{sub 0.68}Ga{sub 0.32}As, with a bandgap of 0.60 eV to compositions In{sub 0.78}Ga{sub 0.22}As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both {ital n}- and {ital p}-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 352903
- Report Number(s):
- CONF-981055--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 460; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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