Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

Journal Article · Sat May 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.581661· OSTI ID:348153

Nesting, D C; Kouvetakis, J ^[1]; Hearne, S; Chason, E ^[2]; Tsong, I S ^[3]

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1. Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
3. Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504 (United States)

The morphology and biaxial stress of amorphous boron films grown on silicon at 630 {degree}C have been determined {ital in situ} and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films {ital in situ} and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 348153
• Journal Information: Journal of Vacuum Science and Technology, A, Vol. 17, Issue 3; Other Information: PBD: May 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
BORON
THIN FILMS
AMORPHOUS STATE
STRESSES
CHEMICAL VAPOR DEPOSITION
STRUCTURAL CHEMICAL ANALYSIS
X-RAY DIFFRACTION
REFLECTIVITY
THICKNESS
ROUGHNESS
SILICON
INTERFACES