Stress evolution during metalorganic chemical vapor deposition of GaN

Journal Article · Thu Dec 31 23:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123070· OSTI ID:302888

Hearne, S; Chason, E; Han, J; Floro, J A; Figiel, J; Hunter, J ^[1]; Amano, H ^[2]; Tsong, I S ^[3]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2. Department of Electrical and Electronic Engineering, Meijo University, Nagoya (Japan)
3. Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504 (United States)

The evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition. In spite of the 16{percent} compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050{degree}C. Furthermore, {ital in situ} stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 302888
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 74; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
SAPPHIRE
STRESSES
THIN FILMS
X-RAY DIFFRACTION