Plasma chemistries for high density plasma etching of SiC
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; and others
The rapid advances in high power/high temperature SiC electronics for use in high voltage switches, power conditioning, electric drive trains, and utility power management has renewed interest in the development of improved processing techniques for the material. A variety of different plasma chemistries, including SF{sub 6}, Cl{sub 2}, ICl, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4,500 {angstrom} {center_dot} min{sup {minus}1} were obtained for SF{sub 6} plasmas, while much lower rates ({le} 800 {angstrom} {center_dot} min{sup {minus}1}) were achieved with Cl{sub 2}, ICl, and IBr. The F{sub 2}-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4--0.5), but Ni masks are more robust, and allow etch depths {ge} 10 {micro}m in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (< 2,000 {angstrom} {center_dot} min{sup {minus}1}) for SiC.
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- Defense Advanced Research Projects Agency, Arlington, VA (United States); Electric Power Research Inst., Palo Alto, CA (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 345072
- Report Number(s):
- CONF-9806176--
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 28; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
Similar Records
ICP Etching of SiC
Comparison of ICl and IBr for dry etching of III-nitrides