Electron microscopic study on residual defects of Al{sup +} or B{sup +} implanted 4H-SiC
- Hitachi Ltd., Ibaraki (Japan). Hitachi Research Lab.
- Kansai Electric Power Co., Inc., Osaka (Japan)
Silicon carbide (SiC) is expected as a semiconductor material used under extreme conditions, such as high-power, high-temperature and high-frequency operation due to its wide band gap, high electric breakdown field, high thermal conductivity and high carrier saturation velocity. The residual defects of Al{sup +}- or B{sup +}-implanted 4H-SiC were studied in combination with annealing temperature and implantation temperature using cross-sectional transmission electron microscopy technique. Noticeable defects structure is not observed before post-implantation annealing. But after annealing, a lot of black spots appear in the implanted layer. These black spots are composed of a dislocation loop, parallel to (0001) of 4H-SiC, and strained area at the upper and lower sides of the dislocation loop. This defect structure and its size do not depend on implantation temperature and implanted ion species. The size of defect area depends only on post-implantation annealing temperature. The size grows, when post-annealing temperature is raised.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 345071
- Report Number(s):
- CONF-9806176-; ISSN 0361-5235; TRN: IM9922%%4
- Journal Information:
- Journal of Electronic Materials, Vol. 28, Issue 3; Conference: 40. electronic materials conference, Charlottesville, VA (United States), 24 Jun 1998; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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