Effects of Implantation Temperature and Ion Flux on Damage Accumulation in Al-Implanted 4H-SiC
Journal Article
·
· Journal of Applied Physics
The effects of implantation temperature and ion flux on damage accumulation on both the Si and C sublattices in 4H-SiC are investigated under 1.1 MeV Al irradiation at temperatures from 150 to 450 K. The rate of damage accumulation decreases dramatically and the damage profile sharpens due to significant dynamic recovery at temperatures close to the critical temperature for amorphization. At 450 K, the relative disorder and the density of planar defects increase rapidly with the increasing ion flux, exhibiting saturation at high ion fluxes. Planar defects are generated through the agglomeration of excess Si and C interstitials during irradiation and post-irradiation annealing at 450 K. Termination of (0001) planes is attributed to the accumulation of vacancies. A volume expansion of {approx}8% is observed for the peak damage region.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US), Environmental Molecular Sciences Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15003569
- Report Number(s):
- PNNL-SA-37025; 3448; KC0201020
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 93; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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