Structure determination of the ({radical} (3) {times}{radical} (3) )R30{degree} boron phase on the Si(111) surface using photoelectron diffraction
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin-Dahlem (Germany)
- Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
- Advanced Light Source, MS2-400, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Physics Department, University of Wisconsin-Milwaukee, 1900 E. Kenwood Boulevard, Milwaukee, Wisconsin 53211 (United States)
A quantitative structural analysis of the system Si(111)({radical} (3) {times}{radical} (3) )R30{degree}-B has been performed using photoelectron diffraction in the scanned energy mode. We confirm that the substitutional S{sub 5} adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98({plus_minus}0.04) {Angstrom}thinsp, 2.14({plus_minus}0.13) {Angstrom}thinsp, and 2.21({plus_minus}0.12) {Angstrom}thinsp. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 341386
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 59; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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