Characterization of GaN grown on SiC on Si/SiO{sub 2}/Si by metalorganic chemical vapor deposition
- Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204 (United States)
- Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730-2396 (United States)
- Astralux, Inc., 2500 Central Avenue, Boulder, Colorado 80301-2814 (United States)
SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO{sub 2}/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO{sub 2}/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001){sub GaN}{vert_bar}{vert_bar}(111){sub SiC};[11{bar 2}0]{sub GaN}{vert_bar}{vert_bar}[1{bar 1}0]{sub SiC}, while most of the c-GaN grains had an orientation relationship (001){sub GaN}{vert_bar}{vert_bar}(001){sub SiC};[1{bar 1}0]{sub GaN}{vert_bar}{vert_bar}[1{bar 1}0]{sub SiC} with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both {ital h}-GaN and {ital c}-GaN are also discussed. {copyright} {ital 1999 Materials Research Society.}
- OSTI ID:
- 337513
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 14; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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