CVD Si sub 3 N sub 4 on single crystal SiC: Part II. High resolution electron microscopy and atomic models of the interface

Journal Article · Mon Jun 01 04:00:00 EDT 1992 · Journal of Materials Research; (United States)

DOI:https://doi.org/10.1557/JMR.1992.1445· OSTI ID:5002402

Unal, O; Mitchell, T E ^[1]

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1. Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Interface studies of CVD Si{sub 3}N{sub 4} grown on (11{bar 1}) SiC single crystal substrates have been made by transmission electron microscopy (TEM). It is found that there are two orientation relationships both of which involve the same (10{bar 1}0)Si{sub 3}N{sub 4}//(11{bar 1})SiC planar relationship. However, the orientation relationships are not perfect and rotations of 2--6{degree} are commonly seen between both directions and planes involved. High resolution electron microscopy (HREM) of the interfaces show that the SiC and Si{sub 3}N{sub 4} are continuous up to the interface and that no intermediate phases are formed. However, due to the small rotations, the HREM images are difficult to interpret directly in terms of atomic positions. Nevertheless, possible atomic models of the interface are proposed based upon the experimental findings. These models exploit the similarities between the (SiN{sub 4}) and (SiC{sub 4}) tetrahedra in Si{sub 3}N{sub 4} and SiC, respectively. The observed orientation relationships appear to be due to matching of tetrahedra across the interface along with adequate lattice matches.

• OSTI ID: 5002402
• Journal Information: Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 7:6; ISSN JMREE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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Cermets
& Refractories-- Structure & Phase Studies
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
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CRYSTALS
DEPOSITION
ELECTRON MICROSCOPY
INTERFACES
MICROSCOPY
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
ORIENTATION
PNICTIDES
SILICON CARBIDES
SILICON COMPOUNDS
SILICON NITRIDES
STRUCTURAL MODELS
SURFACE COATING
TRANSMISSION ELECTRON MICROSCOPY