Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

Journal Article · Sat May 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123913· OSTI ID:337495

Allen, C W; Birtcher, R C ^[1]; Donnelly, S E ^[2]; Furuya, K; Ishikawa, N; Song, M ^[3]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Joule Physics Laboratory, University of Salford, Manchester M5 4WT (United Kingdom)
3. High Resolution Beam Laboratories, National Research Institute for Metals, 3-13 Sakura, Tsukuba 305 (Japan)

Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed {ital in situ} by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 337495
• Journal Information: Applied Physics Letters, Vol. 74, Issue 18; Other Information: PBD: May 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUBBLES
ALUMINIUM
XENON
PRECIPITATION
RADIATION EFFECTS
ELECTRON BEAMS
ION IMPLANTATION
TRANSMISSION ELECTRON MICROSCOPY
RECRYSTALLIZATION
COALESCENCE
DIFFUSION