Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Joule Physics Laboratory, University of Salford, Manchester M5 4WT (United Kingdom)
- High Resolution Beam Laboratories, National Research Institute for Metals, 3-13 Sakura, Tsukuba 305 (Japan)
Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed {ital in situ} by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 337495
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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