Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123838· OSTI ID:336602

Pedraza, A J; Fowlkes, J D ^[1]; Lowndes, D H ^[2]

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1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)

Arrays of high aspect ratio silicon microcolumns that protrude well above the initial surface have been formed by cumulative nanosecond pulsed-excimer laser irradiation of silicon. Microcolumn growth is strongly affected by the gas environment, being enhanced in air or other oxygen-containing ambient. It is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and deposition of silicon from the intense flux of silicon-rich vapor produced by ablation of the surface regions between columns. The molten tips of the columns are strongly preferred sites for deposition, resulting in a very high axial growth rate. The growth process is conceptually similar to the vapor{endash}liquid{endash}solid method used to grow silicon whiskers. However, in the present case the pulsed-laser radiation fulfills two roles almost simultaneously, viz., providing the flux of silicon-containing molecules and melting the tips of the columns. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 336602
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GROWTH
LASER RADIATION
MELTING
MORPHOLOGY
PULSES
RADIATION EFFECTS
SILICON