Electrochemical formation of field emitters
Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.
- Research Organization:
- University of California
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,882,503/A/
- Application Number:
- PAN: 8-847,086
- OSTI ID:
- 335496
- Country of Publication:
- United States
- Language:
- English
Vacuum microelectronics-1992
|
journal | June 1992 |
Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix
|
journal | June 1987 |
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