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Title: Formation of nanofilament field emission devices

Abstract

A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Martinez, CA)
  2. (Lake Oswego, OR)
  3. (Danville, CA)
  4. (Berkeley, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
872936
Patent Number(s):
US 6045678
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
formation; nanofilament; field; emission; devices; process; fabricating; device; enables; aspect; ratio; electroplated; structure; displays; via; formed; dielectric; layer; self-aligned; gate; metal; top; desired; diameter; 50-200; nm; 5-10; embodiment; forming; passivated; plating; enhancement; deposited; bottom; followed; removal; passification; etch; sharpening; hard; mask; removed; following; electroplating; dielectric layer; aspect ratio; field emission; process enables; gate metal; nanofilament field; metal structure; hard mask; desired diameter; mask layer; emission device; emission displays; emission display; emission devices; enhancement layer; /205/445/

Citation Formats

Morse, Jeffrey D., Contolini, Robert J., Musket, Ronald G., and Bernhardt, Anthony F. Formation of nanofilament field emission devices. United States: N. p., 2000. Web.
Morse, Jeffrey D., Contolini, Robert J., Musket, Ronald G., & Bernhardt, Anthony F. Formation of nanofilament field emission devices. United States.
Morse, Jeffrey D., Contolini, Robert J., Musket, Ronald G., and Bernhardt, Anthony F. Sat . "Formation of nanofilament field emission devices". United States. https://www.osti.gov/servlets/purl/872936.
@article{osti_872936,
title = {Formation of nanofilament field emission devices},
author = {Morse, Jeffrey D. and Contolini, Robert J. and Musket, Ronald G. and Bernhardt, Anthony F.},
abstractNote = {A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

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