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VO{sub 2} precipitates for self-protected optical surfaces

Patent ·
OSTI ID:335489
;
A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.
Research Organization:
Lockheed Martin Energy Research Corporation
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-96OR22464
Assignee:
Dept. of Energy, Washington, DC (United States)
Patent Number(s):
US 5,885,665/A/
Application Number:
PAN: 8-853,947
OSTI ID:
335489
Country of Publication:
United States
Language:
English

References (10)

Optical induction and detection of fast phase transition in VO2 journal May 1971
Optical Properties of V O 2 between 0.25 and 5 eV journal August 1968
Optical switching of coherent VO 2 precipitates formed in sapphire by ion implantation and annealing journal May 1996
Femtosecond switching of the solid state phase transition in the smart-system material VO<formula><inf><roman>2</roman></inf></formula>
  • Becker, Michael F.; Buckman, A. B.; Walser, Rodger M.
  • 1994 North American Conference on Smart Structures and Materials, SPIE Proceedings https://doi.org/10.1117/12.174076
conference May 1994
Fast laser kinetic studies of the semiconductor-metal phase transition in VO2 thin films conference January 1979
Preparation of VO_2 thin film and its direct optical bit recording characteristics journal January 1983
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature journal July 1959
Optical storage in VO 2 films journal October 1973
A 10.6 µm scan laser with programmable VO 2 mirror journal December 1979
Fast Laser Excitations in VO2 at the Semiconducting-Metallic Phase Transition book January 1978

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Related Subjects

36 MATERIALS SCIENCE
CRYSTAL-PHASE TRANSFORMATIONS
FABRICATION
ION IMPLANTATION
OPTICAL PROPERTIES
PRECIPITATION
SAPPHIRE
VANADIUM OXIDES