Optical switching of coherent VO{sub 2} precipitates formed in sapphire by ion implantation and annealing
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)
Coherent precipitates of vanadium dioxide have been formed in the near-surface region of sapphire by the stoichiometric coimplantation of vanadium and oxygen combined with subsequent thermal processing at temperatures ranging from 700 to 1000{degree}C. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at {approximately}77{degree}C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally {open_quote}{open_quote}switchable{close_quote}{close_quote} surface region on Al{sub 2}O{sub 3}. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 284241
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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