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Title: Observation of intermixing at the buried CdS/Cu(In,;Ga)Se{sub 2} thin film solar cell heterojunction

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.123578· OSTI ID:328569
 [1]; ; ;  [2]; ; ;  [3];  [4]; ;  [5];  [6];  [7];  [8];  [9];  [10]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. Experimentelle Physik II, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany)
  3. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
  4. Department of Applied Science, University of California at Davis/Livermore, Livermore, California 94551 (United States)
  5. University of Tennessee, Knoxville, Tennessee 37996 (United States)
  6. Department of Physics, University of Wisconsin at Madison, Madison, Wisconsin 65500 (United States)
  7. Tulane University, New Orleans, Louisiana 70118 (United States)
  8. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  9. Siemens AG Corporate Research and Development, Domagkstr. 11, D-80807 Muenchen (Germany)
  10. Siemens Solar GmbH, Domagkstr. 11, D-80807 Muenchen (Germany)

A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se{sub 2} interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. {copyright} {ital 1999 American Institute of Physics.}

OSTI ID:
328569
Journal Information:
Applied Physics Letters, Vol. 74, Issue 10; Other Information: PBD: Mar 1999
Country of Publication:
United States
Language:
English