Raman and photoluminescence studies on intrinsic and Cr-doped ZnSe single crystals
Book
·
OSTI ID:323889
- Univ. of Puerto Rico, San Juan (Puerto Rico). Dept. of Physics
- Fisk Univ., Nashville, TN (United States)
Single crystals of ZnSe, with varying amounts of Cr doping have been studied using Raman and photoluminescence (PL) spectroscopy. The Cr-doped samples show the existence of a coupling mechanism of longitudinal optical (LO) phonons of ZnSe with hole-plasmons. The dependence of intensity ratio of LO and transverse optical (TO) mode on temperature and excitation wavelength, has been attributed to the interaction of the field of LO phonons with the surface electric field in the depletion layer. The interaction of discrete phonons with the electronic continuum of conduction band in ZnSe is responsible for the shift of Raman peaks. The large electron capture cross-section of deep-level Cr{sup 2+} and Cr{sup 1+} impurities is inhibitive for the observation of band-to-band PL transition at {approximately} 2.7 eV in ZnSe:Cr.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
- OSTI ID:
- 323889
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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