Photoluminescence of ZnSe{sub x}Te{sub 1-x}/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

Journal Article · Wed Dec 15 04:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1818712· OSTI ID:20662219

Shih, Y T; Tsai, Y L; Yuan, C T; Chen, C Y; Yang, C S; Chou, W C ^[1]

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1. Institute of Photonics, National Changhua University of Education, Changhua, Taiwan 50007 (China)

This work investigates photoluminescence (PL) spectra from ZnSe{sub x}Te{sub 1-x}/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSe{sub x}Te{sub 1-x}/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSe{sub x}Te{sub 1-x} layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.

• OSTI ID: 20662219
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL GROWTH
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHONONS
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
SCATTERING
SELENIUM TELLURIDES
SEMICONDUCTOR MATERIALS
SPECTRA
SUBSTRATES
TEMPERATURE DEPENDENCE
THICKNESS
ZINC TELLURIDES