The properties of a-Si:H/c-Si heterostructures prepared by 55 kHz PECVD for solar cell application

Conference · Thu Dec 31 00:00:00 EST 1998

OSTI ID:323679

Budaguan, B G; Sherchenkov, A A; Biriukov, A V ^[1]; Aivazov, A A ^[2]; Chernomordic, V D ^[3]; Metselaar, J W ^[4]

---

1. Moscow Inst. of Electronic Technology (Russian Federation)
2. UniSil Corp., Mountain View, CA (United States)
3. Russian Academy of Sciences, Yaroslavl` (Russian Federation). Inst. of Microelectronics
4. Univ. of Technology, Delft (Netherlands)

In this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Current-voltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measured to investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2{center_dot}10{sup 10} cm{sup {minus}2}). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a-Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

• Sponsoring Organization: Nederlandse Centrale Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek, The Hague (Netherlands)
• OSTI ID: 323679
• Report Number(s): CONF-971201-; TRN: IM9911%%293
• Resource Relation: Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
SILICON
AMORPHOUS STATE
POLYCRYSTALS
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
INTERFACES
ENERGY GAP