The properties of a-Si:H/c-Si heterostructures prepared by 55 kHz PECVD for solar cell application

Conference · Wed Dec 30 23:00:00 EST 1998

OSTI ID:323679

Budaguan, B G; Sherchenkov, A A; Biriukov, A V ^[1]; Aivazov, A A ^[2]; Chernomordic, V D ^[3]; Metselaar, J W ^[4]

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1. Moscow Inst. of Electronic Technology (Russian Federation)
2. UniSil Corp., Mountain View, CA (United States)
3. Russian Academy of Sciences, Yaroslavl` (Russian Federation). Inst. of Microelectronics
4. Univ. of Technology, Delft (Netherlands)

In this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Current-voltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measured to investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2{center_dot}10{sup 10} cm{sup {minus}2}). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a-Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

• Sponsoring Organization: Nederlandse Centrale Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek, The Hague (Netherlands)
• OSTI ID: 323679
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
ENERGY GAP
INTERFACES
POLYCRYSTALS
SILICON
SILICON SOLAR CELLS