Admittance of a-Si:H/c-Si Schottky diodes

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527642

Gall, S; Hirschauer, R; Braeunig, D ^[1]; Kolter, M ^[2]

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1. Hahn-Meitner-Inst., Berlin (Germany). Dept. AT
2. Forschungszentrum Juelich (Germany)

Heterojunction devices, based on hydrogenated amorphous silicon (a-Si:H) and single crystalline silicon (c-Si), are likely candidates for high efficiency solar cells. The authors have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between {lambda} = 500nm and {lambda} = 1,200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-SiH/c-Si interface). They have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behavior of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. The authors have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behavior.

• OSTI ID: 527642
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CAPACITANCE
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FREQUENCY DEPENDENCE
HETEROJUNCTIONS
ILLUMINANCE
SILICON
SIMULATION
SOLAR CELLS
TEMPERATURE DEPENDENCE
THEORETICAL DATA