Novel multilayer process for CuInSe{sub 2} thin film formation by rapid thermal processing

Conference · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323657

Chang, C H; Stanbery, B; Morrone, A; Davydov, A; Anderson, T ^[1]

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1. Univ. of Florida, Gainesville, FL (United States)

CuInSe{sub 2} thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290 C for 70 s. With appropriate processing conditions no detrimental Cu{sub 2{minus}x}Se phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200 C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

• Sponsoring Organization: National Renewable Energy Lab., Golden, CO (United States)
• OSTI ID: 323657
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
DEPOSITION
HEAT TREATMENTS
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
PHASE DIAGRAMS
PHASE STUDIES