Development of high efficiency thin film polycrystalline silicon solar cells using VEST process
- Mitsubishi Electric Corp., Hyogo (Japan). Nakatsugawa Works
Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763) with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.
- Sponsoring Organization:
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- OSTI ID:
- 323632
- Report Number(s):
- CONF-971201-; TRN: IM9911%%246
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
- Country of Publication:
- United States
- Language:
- English
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